title
  • image of IGBT Modules>NXH100T120L3Q0S1NG
  • image of IGBT Modules>NXH100T120L3Q0S1NG
  • Part number NXH100T120L3Q0S1NG
    Product classification IGBT Modules
    description 1200V GEN III Q0PACK WITH NI-PLA
    encapsulation Tray
    quantity 224
    price $60.5700
    RoHS status YES
    specifications
    PDF(1)
    TYPEDESCRIPTION
    MfrSanyo Semiconductor/onsemi
    Series-
    PackageTray
    Product StatusACTIVE
    Package / CaseModule
    Mounting TypeChassis Mount
    InputStandard
    ConfigurationThree Level Inverter
    Operating Temperature-40°C ~ 175°C (TJ)
    Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 75A
    NTC ThermistorYes
    Supplier Device Package18-PIM/Q0PACK (55x32.5)
    Current - Collector (Ic) (Max)54 A
    Voltage - Collector Emitter Breakdown (Max)650 V
    Power - Max122 W
    Current - Collector Cutoff (Max)200 µA
    Input Capacitance (Cies) @ Vce4877 pF @ 25 V